John C. Lambropoulos and Sivan Salzman and Thomas R. Smith and Jing Xu and Michael Pomerantz and Prithiviraj Shanmugam and Matt Davies and Lauren L. Taylor and Jie Qiao
We assess subsurface damage in ground Silicon Carbide, by measurement of roughness evolution and material removal rate in sub-aperture finished spots, or by estimates via material property figures of merit or abrasive size used for grinding.